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Si1037X
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( ? )
0.195 at V GS = - 4.5 V
0.260 at V GS = - 2.5 V
0.350 at V GS = - 1.8 V
I D (A)
- 0.84
- 0.73
- 0.64
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Low Threshold
? Smallest LITTLE FOOT ? Package:
1.6 mm x 1.6 mm
? Low 0.6 mm Profile
? Compliant to RoHS Directive 2002/95/EC
SC-89 (6-LEADS)
APPLICATIONS
? Cell Phones and Pagers
D
1
6
D
- Load Switch
D
2
5
D
Marking Code
? Battery Operated Systems
N
WL
G
3
4
S
Lot Traceability
and Date Code
Part Number Code
Top View
Ordering Information: Si1037X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 0.84
- 0.68
-4
- 0.77
- 0.62
A
Continuous Diode Current (Diode Conduction) a
I S
- 0.18
- 0.14
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
0.21
0.13
- 55 to 150
0.17
0.10
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t ? 5s
Steady State
R thJA
500
600
600
720
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with minimum copper.
Document Number: 70686
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
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